| PART |
Description |
Maker |
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W
|
Shanghai Sunrise Electronics
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| HYR1559 HYR-1559 |
High Voltage Breakdown
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PZTA42 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| HDPE15U60G |
High breakdown voltage
|
SemiHow Co.,Ltd.
|
| HDS20U30GW |
High Breakdown Voltage
|
SemiHow Co.,Ltd.
|
| PS7141L-2B PS7141L-1B-E3 PS7141L-1B-E4 PS7141L-1B |
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH, 2-CH OPTICAL COUPLED MOSFET 6引脚DIP00击穿电压通常闭式1通道通道光学耦合MOSFET
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH, 2-CH OPTICAL COUPLED MOSFET 6引脚DIP00击穿电压通常闭式1通道2通道光学耦合MOSFET
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH 2-CH OPTICAL COUPLED MOSFET
|
California Eastern Laboratories, Inc.
NEC Corp.
NEC[NEC]
California Eastern Labs
|
| 130D |
High breakdown voltage 10KV/15KV
|
DB Lectro Inc
|
| SMTPA100 SMTPA130 SMTPA120 SMTPA180 SMTPA200 SMTPA |
TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V
|
Galaxy Semi-Conductor Holdings Limited
|
| 2SD814 2SD814A 2SD0814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
